- 制造商：长电,JCST
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商品描述
| 型号Type | 封装Package | Drain to Source Voltage V(BR)DSS （V） | Drain Current ID (A) | Static Drain-Source On-Resistance RDS(on) (Ω) |
| UM6K1N | SOT-363 | 30 | 0.1 | 13 |
UM6K1N,Dual N-channel MOSFET,SOT-363 Plastic-Encapsulate MOSFETS
FEATURES:
1) Two 2SK3018 transistors in a package.
2) The MOSFET elements are independent,eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
MARKING:K1
UM6K1N Datasheet:
