- 制造商：长电,JCST
- 库存编号：
- 制造商编号：
- 库存状态：
- 最小订单量：
- 多重订单量：
- 单位价格：
商品描述
| 型号Type | 封装Package | Drain to Source Voltage V(BR)DSS （V） | Drain Current ID (A) | Static Drain-Source On-Resistance RDS(on) (Ω) |
| M7002TTD03 | WBFBP-03A | 60 | 0.115 | 7.5 |
M7002TTD03,MOSFET(N-CHANNEL),WBFBP-03A Plastic-Encapsulate MOSFETS
Description:
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
MOSFET gate drivers, and other switching applications.
FEATURES:
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
APPLICATION:
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:72
M7002TTD03 Datasheet:
