- 制造商：长电,JCST
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商品描述
| 型号Type | 封装Package | Drain to Source Voltage V(BR)DSS （V） | Drain Current ID (A) | Static Drain-Source On-Resistance RDS(on) (Ω) |
| IRFF730 | TO-220F | 400 | 5.5 | 1 |
IRFF730,MOSFET(N-Channel),TO-220F Plastic-Encapsulate MOSFETS
FEATURES:
. Dynamic dv/dt Rating
. Repetitive Avalanche Rated
. Fast Switching
. Ease of Paralleling
. Simple Drive Requirement
Description:
Third Generation HEXFETs from internation Rectifier provide the
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220F package is universally preferred for all commercial-industrial
applications. The low thermal resistance and low package cost of the TO-220F
contribute to its wide acceptance throughout the industry.
IRFF730 Datasheet:
