商品描述
| Product | Dimension | VF_Typ (V) | Rise / Fall Time (us) | BVCEO _Min (V) | CTR (%) | Viso (Vrms) | VCE(SAT)_Max (V) |
| EL452-G | 4.4 x4.1 x2.0 | 1.2 | 80/10 | 350 | 1000 min | 3750 | 1.5 |
Features:
• Halogens free
• High collect-Emitter voltage (VCEO = 350V)
• Current transfer ratio (CTR: Min. 1000% at IF =1mA ,VCE =2V)
• High isolation voltage between input and output (Viso=3750 V rms )
• Compact 4 Pin SOP with a 2.0 mm profile
• Pb free and RoHS compliant.
• UL approved (Pending)
• VDE approved (Pending)
• SEMKO approved (Pending)
• NEMKO approved (Pending)
• DEMKO approved (Pending)
• FIMKO approved (Pending)
• CSA approved (Pending)
Description
The EL452-G contains an infrared emitting diode, optically
coupled to a high voltage darlington phototransistor.
It is packaged in a 4-pin small outline SMD package.
Applications
• Telephone set, telephone exchangers
• Sequence controllers
• System appliances, measuring instruments
• Signal transmission between circuits of different potentials and impedance









