- 制造商：长电,JCST
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商品描述
| 型号Type | 封装Package |
Drain to Source Voltage V(BR)DSS （V） |
Drain Current ID (A) |
Static Drain-Source On- Resistance RDS(on) (Ω) |
| CJD02N60 | TO-251 | 600 | 2 | 4.4 |
CJD02N60 ,N-Channel Power MOSFET ,
TO-251 Plastic-Encapsulate MOSFETS
General Description :
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
FEATURES :
Robust High Voltage Termination .
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
CJD02N60 Datasheet:
